An novel thin layer SOI copyright-stored (CS) trench lateral insulated gate bipolar transistor (TLIGBT) with diode-clamped P-shield layer is proposed. The potential of the P-shield layer is clamped by two series-connected diodes. Therefore. the reverse voltage is sustained by the P-shield/Ndrift junction rather than the P-base/CS junction during the off-state. https://www.bekindtopets.com/bargain-FOX-985-24-100-Performance-Series-2-0-Reservoir-Shock-for-4-5in-Lift-2014-2022-Ram-2500-3500-hot-grab/